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IT giant becomes the first to manufacture 20-nano DRAM By Yoon Ja-young Samsung Electronics, the world’s leading maker of memory chips, has opened the biggest memory chip manufacturing line as well as started producing 20-nano DRAMs for the first time in the world. With its massive investment, Samsung widened the gap with the Japanese and Taiwanese chipmakers. ``I appreciate our executives and employees for their efforts to successfully launch a landmark memory line and start producing the first 20-nano DRAM in the world,” Samsung Electronics Chairman Lee Kun-hee said at the production line launching ceremony held at Nano City Hwasung Campus in Gyeonggi Province, Thursday. “We are able to continue holding the leadership in technology thanks to your impressive efforts, but we should be prepared against the storm in the industry,” he told employees. The chairman has paid special attention to the semiconductor business since returning to management in May last year. At the groundbreaking ceremony of the production line in May last year, Lee said that Samsung would increase investment and hire more people despite uncertainties in the global economy to be a forerunner in the global market and contribute to the economy. The company’s top management includes Chairman Lee, Kwon Oh-hyun, the company’s semiconductor division president and Lee Jae-yong, Samsung’s president and the only son of the chairman. Global IT leaders including Sony Vice President Yutaka Nakagawa participated in the ceremony. Samsung began construction of the production line, dubbed number 16, in May last year. With a fabrication facility as large as 60,000 pyeong, or 19.8 ha, in a 12-story building, it is the biggest memory production line in the world solely dedicated to NAND production. NAND is used to make smartphones, tablets and USB. Construction was completed in February, and the clean room was built in May. Following test operations that started in June, Samsung began producing 20-nano NAND flashes with a 12-inch wafer. It plans to increase 12-inch wafer production until the end of this year to meet the fast growing demand for NAND flash. From next year it plans to produce a 10-nano memory line. Samsung also started manufacturing 20-nano 2Gb DRAMs. Raising productivity by 50 percent and decreasing electricity consumption by 40 percent compared with the 30-nano DDR3 DRAMs it released in July last year, Samsung remains unchallenged in the ring of advanced technology. The chipmaker plans to develop a 20-nano 4Gb DDR3 DRAM around the end of this year, expanding the lineup to 4GB, 8GB, 16GB, and 32GB from next year.
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